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New Original to-220f 7A 680V N-Channel Mosfet Transistor 7n65

Price $0.04
Min Order 1000 Pieces
Availability In Stock
Shipping From Jiangsu, China
Popularity 502 people viewed
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Model NO.:
Mosfet
Certification:
RoHS, CE, ISO, CCC, SGS
Shape:
GT
Shielding Type:
Remote Cut-Off Shielding Tube
Cooling Method:
Naturally Cooled Tube
Function:
High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency:
High Frequency
Structure:
IGBT
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
ZG
Transport Package:
by Sea, Packing
Specification:
T0-247, T0-3P, T0-220, T0-220F, T0-263
Origin:
Auhui Province, China
HS Code:
8541100000
Product Description

Parameter
Symbol
Value
Unit
-
Drain-Source Voltage		VDSS650V

Continues Drain Current		IDTc=25ºC7*A
Tc=100ºC4.0*
( 1)
Plused Drain Current (note 1)		IDM25A

Gate-to-Source Voltage		VGS±30V
( 2)
Single Pulsed Avalanche Energy (note 2)		EAS400mJ
( 1)
Avalanche Current (note 1)		IAR7.0A
( 1)
Repetitive Avalanche Energy (note 1)		EAR14.5mJ
( 3)
Peak Diode Recovery (note 3)		dv/dt4.5V/ns

Power Dissipation		PD
Tc=25ºC		TO-220/TO-262147W
TO-220F48

Power Dissipation Derating Factor		PD(DF)
Above 25ºC		TO-220/TO-2621.18W/ºC
TO-220F0.38
 
Operating and Storage Temperature Range		TJ,TSTG150,-55~+150ºC

Maximum Temperature for Soldering		TL300ºC
ZG7N65 is an N-channel enhancement mode MOSFET, which is produced using Zhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.

Parameter
Symbol
Max
Unit

Thermal Resistance,Junction to Case		Rth(j-c)TO-220/TO-2620.85W
TO-220F2.6

Thermal Resistance,Junction to Ambient		Rth(j-A)TO-220/TO-26262.5W/ºC
TO-220F62.5
  Off-Characteristics

Parameter
Symbol
Tests Conditions
Min
Type
Max
Unit
-
Drain-Source Breakdown Voltage		BVDSSID=250μA, VGS=0V650--V

Breakdown Voltage Temperature Coefficient		△BVDSS/△TJID=250μA, referenced to 25ºC-0.7-V/ºC
 
Zero Gate Voltage Drain Current		IDSSVDS=650V,VGS=0V, TC=25ºC--1μA
VDS=520V, TC=125ºC--10

Gate-body leakage current, forward		IGSSFVDS=0V, VGS =30V--100nA

Gate-body leakage current, reverse		IGSSRVDS=0V, VGS = -30V---100nA
  On-Characteristics

Parameter
Symbol
Tests Conditions
Min
Type
Max
Unit

Gate Threshold Voltage		VGS(th)VDS = VGS , ID=250μA2.0-4.0V

Static Drain-Source On-Resistance		RDS(ON)VGS =10V , ID=3.5A-1.21.5Ω

Forward Transconductance		gfsVDS = 40V, ID=3.5A(note4)-6.5-S
  Dynamic Characteristics

Parameter
Symbol
Tests Conditions
Min
Type
Max
Unit

Input capacitance		CissVDS=25V, VGS =0V, f=1.0MHZ-9601890pF

Output capacitance		Coss-95178pF

Reverse transfer capacitance		Crss-1320pF
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