General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
- Low RDS(ON) & FOM
- Extremely low switching loss
- Excellent stability and uniformity
Applications
- PC power
- LED lighting
- Telecom power
- Server power
- EV Charger
- Solar/UPS
Key Performance Parameters
Parameter | Value | Unit |
VDS, min @ Tj(max) | 650 | V |
ID, pulse | 90 | A |
RDS(ON) , max @ VGS=10V | 99 | mΩ |
Qg | 35.7 | nC |
Marking Information
Product Name | Package | Marking |
OSG60R099HT3F | TO247 | OSG60R099HT3 |
Ordering Information
Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
TO247-J | 30 | 20 | 600 | 4 | 2400 |
TO247-S | 30 | 15 | 450 | 4 | 1800 |
Product Information
Product | Package | Pb Free | RoHS | Halogen Free |
OSG60R099HT3F | TO247 | yes | yes | yes |
Supply Chain

Green Product Declaration






