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Semiconductor Device Fabrication Fab Wafer Fabrication Etching Inductively Coupled Plasma Etching Machine Icp for Si/Sio2/Sinx/ Sic Beol Feol
| Price | $150000.00 |
|---|---|
| Min Order | 1 Piece |
| Availability | In Stock |
| Shipping From | Guangdong, China |
| Popularity | 546 people viewed |
Model NO.:
MD150-SICP
After-sales Service:
Installation, Training
Warranty:
One Year Warranty
Type:
Electrical Etching Machine
Object:
Silicon-Based:Si/Sio2/Sinxsic
Usage:
Corrosion & Hollowed-out
Certification:
ISO9001: 2000, CE
Etching Type:
Reactive Ion Etching
Precision:
High Precision
Condition:
New
Trademark:
Minder-Hightech
Transport Package:
Wooden Case
Specification:
1170*750*1080mm
Origin:
China
Product Description
Inductively coupled plasma etching machine-ICP
| Item | MD150S-ICP | MD200S-ICP | MD150CS-ICP | MD200CS-ICP | MD300C-ICP |
| Product size | ≤6 inches | ≤8 inches | ≤6 inches | ≤8 inches | Custom≥12inches |
| SRF Power source | 0~1000W/2000W/3000W/5000WAdjustable,automatic matching\,13.56MHz/27MHz | ||||
| BRF Power source | 0~300W/0~500W/0~1000WAdjustable, automatic matching,2MHz/13.56MHz | ||||
| Molecular pump | Non corrosive : 600 /1300 (L/s)/Custom | Anti-corrosion:600 /1300 (L./s)/Custom | 600/1300(L/s) /Custom | ||
| Foreline pump | Mechanical pump / dry pump | Anti corrosion dry pump | Mechanical pump / dry pump | ||
| Pre pumping pump | Mechanical pump / dry pump | Mechanical pump / dry pump | |||
| Process pressure | Uncontrolled pressure/0-0.1/1/10Torr controlled pressure | ||||
| Gas type | H2/CH4/O2/N2/Ar/SF6/CF4/ CHF3/C4F8/NF3/NH3/C2F6/Custom (Up to 12 channels, no corrosive & toxic gas) | H2/CH4/O2/N2/Ar/SF6/CF4/CHF3/ C4F8/NF3/NH3/C2F6/Cl2/BCl3/HBr/ Custom(Up to 12 channels) | |||
| Gas range | 0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/1000sccm/Custom | ||||
| LoadLock | Yes/No | Yes | |||
| Sample tem control | 10°C~Roomtem/ -30°C~150°C /Custom | -30°C~200°C/Custom | |||
| Back helium cooling | Yes/No | Yes | |||
| Process cavity lining | Yes/No | Yes | |||
| Cavity wall tem control | No/Room tem-60/120°C | Room tem~60/120°C | |||
| Control System | Auto/custom | ||||
| Etching material | Silicon-base: Si/SiO2/ SiNx/ SiC..... Organic materials:PR/Organic film...... | Silicon-base: Si/SiO2/SiNx/SiC III-V: InP/GaAs/GaN...... IV-IV: SiC II-VI: CdTe...... Magnetic material / alloy material Metallic materials: Ni/Cr/Al/Cu/Au... Organic materials: PR/Organic film...... Silicon deep etching | |||
Quartz / silicon / grating etching
Using BR mask to etch quartz or silicon materials, the grating array pattern has the thinnest line up to 300nm and the sidewall steepness of the pattern is close to > 89° , which can be applied to 3D display, micro optical devices, optoelectronic communication, etc
Compound / semiconductor etching
Accurate control of sample surface temperature can well control the etching morphology of GaN based, GaAs, InP and metal materials. lt is suitable for blue lED devices, lasers, optical communication and other applications.
Silicon-based material etching
it is suitable for etching silicon based materials such as Si, SiO2, and SiNx. lt can realize silicon line etching above 50nm and silicon deep hole etching below 100um
Minder-Hightech is sales and service representative in semiconductor and electronic product industry equipment.
The company is committed to providing customers with Superior, Reliable, and One-Stop Solutions for machinary equipment.
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