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To247-4L Ost50n65h4ewf Vces-650V Maximum Junction Temperature175 Pulse-200A Vce (sat) -1.4V Qg-104nc IGBT

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Model NO.:
cIGBT-Sic Diode TO247-4L OST50N65H4EWF
Certification:
RoHS, ISO
Shape:
GT
Shielding Type:
Remote Cut-Off Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Origin:
China
HS Code:
8541290000
Product Description



General Description
OST50N65H4EWF  uses  advanced  Oriental-Semi's  patented  Trident-Gate  Bipolar  Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.



Features
     Advanced TGBTTM technology
     Excellent conduction and switching loss
     Excellent stability and uniformity
     Fast and soft antiparallel SiC diode



Applications
     Induction converters
     Uninterruptible power supplies



Key Performance Parameters
ParameterValueUnit
VCES, min @ 25 °C650V
Maximum junction temperature175°C
IC, pulse200A
VCE(sat), typ @ VGE=15 V1.4V
Qg104nC



Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted
ParameterSymbolValueUnit
Collector emitter voltageVCES650V
Gate emitter voltage
VGES		±20V
Transient gate emitter voltage, TP≤10 µs, D<0.01±30V
Continuous collector current1) , TC=25 °C
IC		80A
Continuous collector current1) , TC=100 °C50A
Pulsed collector current2) , TC=25 °CIC, pulse200A
Diode forward current1) , TC=25 °C
IF		30A
Diode forward current1) , TC=100 °C20A
Diode pulsed current2) , TC=25 °CIF, pulse200A
Power dissipation3) , TC=25 °C
PD		375W
Power dissipation3) , TC=100 °C150W
Operation and storage temperatureTstg, Tvj-55 to 175°C
Short circuit withstand time
VGE =15 V, VCC≤400 V
Allowed number of short circuits<1000
Time between short circuits:≥1.0 S
Tvj =150 °C

SC

5

μs



Thermal Characteristics
ParameterSymbolValueUnit
IGBT thermal resistance, junction-caseRθJC0.4°C/W
Diode thermal resistance, junction-caseRθJC1.29°C/W
Thermal resistance, junction-ambient4)RθJA40°C/W



Dynamic Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Input capacitanceCies 5853 pF
VGE=0 V,
VCE =25 V,
ƒ=100 kHz
Output capacitanceCoes 194 pF
Reverse transfer capacitanceCres 5 pF
Turn-on delay timetd(on) 60 ns


VGE=15 V,
VCC=400 V,
RG=10 Ω,
IC=50 A
Rise timetr 88 ns
Turn-off delay timetd(off) 140 ns
Fall timetf 60 ns
Turn-on energyEon 1.3 mJ
Turn-off energyEoff 0.56 mJ
Turn-on delay timetd(on) 56 ns


VGE=15 V,
VCC=400 V,
RG=10 Ω,
IC=25 A
Rise timetr 43 ns
Turn-off delay timetd(off) 166 ns
Fall timetf 48 ns
Turn-on energyEon 0.34 mJ
Turn-off energyEoff 0.26 mJ



Gate Charge Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 104 nC
VGE =15 V,
VCC=520 V,
IC=50 A
Gate-emitter chargeQge 47 nC
Gate-collector chargeQgc 14 nC



Body Diode Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Diode reverse recovery timetrr 26 nsVR=400 V,
IF=50 A,
diF/dt=500 A/μs Tvj =25 °C
Diode reverse recovery chargeQrr 63 nC
Diode peak reverse recovery currentIrrm 4.4 A

Note
1)   Calculated continuous current based on maximum allowable junction temperature.
2)   Repetitive rating; pulse width limited by max. junction temperature.
3)   Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in2  FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.



Ordering Information
Package
Type		Units/
Tube		Tubes/  Inner BoxUnits/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton Box
TO247-4L-S301545041800



Product Information
ProductPackagePb FreeRoHSHalogen Free
OST50N65H4EWFTO247-4Lyesyesyes



 
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