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To247 Ost90n60hczf Vces-600V Maximum Junction Temperature175 Pulse-270A N-Channel Power IGBT

Price $1.10
Min Order 600 Pieces
Availability In Stock
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Model NO.:
TO247 OST90N60HCZF
Certification:
RoHS, ISO
Shape:
Metal Porcelain Tube
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
35x30x37cm
Origin:
China
HS Code:
8541290000
Product Description

General Description
OST90N60HCZF   uses   advanced   Oriental-Semi's   patented   Trident-Gate   Bipolar   Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.


Features
     Advanced TGBTTM technology
     Excellent conduction and switching loss
     Excellent stability and uniformity
     Fast and soft antiparallel diode



Applications
     Induction converters
     Uninterruptible power supplies


Key Performance Parameters
ParameterValueUnit
VCES, min @ 25 °C600V
Maximum junction temperature175°C
IC, pulse270A
VCE(sat), typ @ VGE=15 V1.65V
Qg198nC



Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted
ParameterSymbolValueUnit
Collector emitter voltageVCES600V
Gate emitter voltage
VGES		±20V
Transient gate emitter voltage, TP≤10 µs, D<0.01±30V
Continuous collector current1) , TC=25 °C
IC		180A
Continuous collector current1) , TC=100 °C90A
Pulsed collector current2) , TC=25 °CIC, pulse270A
Diode forward current1) , TC=25 °C
IF		180A
Diode forward current1) , TC=100 °C90A
Diode pulsed current2) , TC=25 °CIF, pulse270A
Power dissipation3) , TC=25 °C
PD		180W
Power dissipation3) , TC=100 °C135W
Operation and storage temperatureTstg, Tvj-55 to 175°C
Short circuit withstand time
VGE =15 V, VCC≤400 V
Allowed number of short circuits<1000
Time between short circuits:≥1.0 S
Tvj =150 °C

SC

10

μs




Thermal Characteristics
ParameterSymbolValueUnit
IGBT thermal resistance, junction-caseRθJC0.83°C/W
Diode thermal resistance, junction-caseRθJC0.94°C/W
Thermal resistance, junction-ambient4)RθJA65°C/W



Gate Charge Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 198 nC
VGE =15 V,
VCC=520 V,
IC=90 A
Gate-emitter chargeQge 62.6 nC
Gate-collector chargeQgc 93.4 nC



Body Diode Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Diode reverse recovery timetrr 173 nsVR=400 V,
IF=50 A,
diF/dt=500 A/μs Tvj =25 °C
Diode reverse recovery chargeQrr 3.6 μC
Diode peak reverse recovery currentIrrm 42 A


Note
1)   Calculated continuous current based on maximum allowable junction temperature.
2)   Repetitive rating; pulse width limited by max. junction temperature.
3)   Pd is based on max. junction temperature, using junction-case thermal resistance.
4)   The value of RθJA  is measured with the device mounted on 1 in square FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.



Ordering Information
 
Package
Type		Units/
Tube		Tubes/  Inner BoxUnits/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton Box
TO247-J302060053000



Product Information
ProductPackagePb FreeRoHSHalogen Free
OST90N60HCZFTO247yesyesyes

 

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