2-Inch Self-Supporting GaN Wafer (silicon doped) Video, Demo, How It Works & Features
This video cannot be played in your browser.
Need price or Contact this supplier?
Get a Quote
Product Specifications
Model NO.:
GaN Wafer (silicon doped)
Formula:
4h
Size:
Ф 50.8 ± 1 mm
Thickness:
350 ± 25 μm
Resistivity 300K:
< 0.5 Ω*Cm
Specification:
GaN-FS-C-U-C50
Origin:
China