2-Inch Self-Supporting GaN Wafer (silicon doped) Video,Demo, How It Works & Features_MadeInChina.com

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2-Inch Self-Supporting GaN Wafer (silicon doped) 2025-04-09 4330
	China Quality Research Grade 6-Inch Silicon Carbide Wafer 272 views 4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod 234 views 2-Inch Self-Supporting GaN Wafer (silicon doped) 433 views 4 Inch P Grade High Purity Semi-Insulating Sic Substrate Sic Wafer 277 views Semiconductor 6 Inch High Purity Semi-Insulating Sic Substrate Sic Wafer 250 views

Product Specifications

Model NO.:

GaN Wafer (silicon doped)

Formula:

4h

Size:

&Fcy; 50.8 ± 1 mm

Thickness:

350 ± 25 μm

Resistivity 300K:

< 0.5 Ω*Cm

Specification:

GaN-FS-C-U-C50

Origin:

China

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