4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod Video,Demo, How It Works & Features_MadeInChina.com

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4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod Video,Demo, How It Works & Features 2025-04-09 2500
	Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications 311 views China Quality Research Grade 6-Inch Silicon Carbide Wafer 280 views 4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod 250 views 2-Inch Self-Supporting GaN Wafer (silicon doped) 447 views 4 Inch P Grade High Purity Semi-Insulating Sic Substrate Sic Wafer 292 views

Product Specifications

Model NO.:

4H N-type ingot D-Grade

Certification:

RoHS

Poly Type:

4h

Diameter:

150 ±0.25 mm

Dopant:

N-Type Nitrogen

Resistivity:

0.015~0.028 Ohm.Cm

Trademark:

HC

Specification:

4 "6" 8"

Origin:

China

HS Code:

2804611900

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