Name: Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications
Uploaded: 2025-03-24T15:37:30+08:00
Description: Explore Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications Video, More P-type Semiconductor Semiconductor Electrical & Electronics videos at MadeInChina.com,Silicon Carbide Wafer,3c Sic Wafer,Sic Substrate,Sic Semiconductor

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Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications 2025-04-09 3020IP Unknown
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Product Specifications

Model NO.:

2~4inch 3C N-type

Application:

Diode, Power Electronic Components

Batch Number:

2023+

Certification:

CCC, CE, RoHS

Manufacturing Technology:

Pvt

Material:

3c-Sic Powder

Diameter:

6inch

Hickness:

350±25μm

Poly Type:

4h/6h/3c

Resistivity:

0.06~0.11 ≤0.1 Ωcm

Trademark:

HC

Specification:

4Inch

Origin:

China

HS Code:

2804611900

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