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8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate Video,Demo, How It Works & Features

Name: 8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate
Uploaded: 2026-03-27T22:58:07+08:00
Description: Watch the 8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate video demo to see how it works, key features, and real-use scenarios. A helpful video guide before you buy.,Silicon Carbide Wafer,Sic Wafer,Sic Substrate,Sic Crystal

2025-04-09 2970

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Product Specifications

Model NO.:

4H N-type Ultra-P Grade

Application:

Diode, Power Electronic Components

Certification:

RoHS

Manufacturing Technology:

Pvt

Material:

6n Sic Powder

Model:

4h N-Type

Package:

Epi-Ready with Vacuum Packaging

Type:

N-Type Semiconductor

Diameter:

8 Inch

Thickness:

500±25μm

Poly Type:

Resistivity:

0.015~0.025ohm·cm

Ttv:

≤7μm

Warp:

≤30μm

(Afm) Front (Si-Face) Roughness:

Ra≤0.2nm

Trademark:

Transport Package:

Multi-Waferorsingle Wafer Cassette Packaging

Specification:

8Inch 4H N-type

Origin:

China

HS Code:

2804611900

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