8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

2025-04-09 2780

Product Specifications

4H N-type Ultra-P Grade
Diode, Power Electronic Components
RoHS
Pvt
6n Sic Powder
4h N-Type
Epi-Ready with Vacuum Packaging
N-Type Semiconductor
8 Inch
500±25μm
4h
0.015~0.025ohm·cm
≤7μm
≤30μm
Ra≤0.2nm
HC
Multi-Waferorsingle Wafer Cassette Packaging
8Inch 4H N-type
China
2804611900
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