MadeInChina.com > Video> Electrical & Electronics > Semiconductor > N-type Semiconductor

8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

2025-04-09 2740IP Unknown

4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer
207 views

6 Inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer Price
366 views

8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate
274 views

2-12 Inch Epitaxially Grown Sapphire Substrate Wafers
469 views

6 Inch Dummy Grade Silicon Carbide Wafer N-Type Semiconductor Sic Wafer
423 views

Product Specifications

Model NO.:

4H N-type Ultra-P Grade

Application:

Diode, Power Electronic Components

Certification:

RoHS

Manufacturing Technology:

Pvt

Material:

6n Sic Powder

Model:

4h N-Type

Package:

Epi-Ready with Vacuum Packaging

Type:

N-Type Semiconductor

Diameter:

8 Inch

Thickness:

500±25μm

Poly Type:

4h

Resistivity:

0.015~0.025ohm·cm

Ttv:

≤7μm

Warp:

≤30μm

(Afm) Front (Si-Face) Roughness:

Ra≤0.2nm

Trademark:

HC

Transport Package:

Multi-Waferorsingle Wafer Cassette Packaging

Specification:

8Inch 4H N-type

Origin:

China

HS Code:

2804611900

You May Like: Silicon Carbide Wafer, Sic Wafer, Sic Substrate, Sic Crystal

Like 0 Dislike 0 Comment 0

More>Recommended Video

49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08 to-220c

269

49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08 to-220c

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2

279

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2

Pcf8574ap New Original Integrated Circuit IC Chips

461

Pcf8574ap New Original Integrated Circuit IC Chips

Silicon Carbide Wafer 4 Inches 6 Inches Can Be Customized

306

Silicon Carbide Wafer 4 Inches 6 Inches Can Be Customized

Insulated Gate Bipolar Transistor IGBT G30n60d to-247

209

Insulated Gate Bipolar Transistor IGBT G30n60d to-247

D120n04 to-252 120A 40V N-Channel Enhancement Mode Power Mosfet

490

D120n04 to-252 120A 40V N-Channel Enhancement Mode Power Mosfet

China Supplier 40V 110A Ncep40t11AG Nce N-Channel Super Trench Power Mosfet Power Transistor IC Semiconductor

418

China Supplier 40V 110A Ncep40t11AG Nce N-Channel Super Trench Power Mosfet Power Transistor IC Semiconductor

Normal Type Phase Control Thyristor (KK 1500A/2000V)

257

Normal Type Phase Control Thyristor (KK 1500A/2000V)

100% Original Electronic Componets Nce30td60bt 600V 30A Trench Fs II Fast IGBT with to-247

332

100% Original Electronic Componets Nce30td60bt 600V 30A Trench Fs II Fast IGBT with to-247

Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b

235

Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b

Ncep40t13agu Nce N-Channel Super Trench Power Mosfet

247

Ncep40t13agu Nce N-Channel Super Trench Power Mosfet

Phase Control Thyristor SCR Kp 600A/1200-2000V

495

Phase Control Thyristor SCR Kp 600A/1200-2000V

(c)2024-2025 MadeinChina.com All Rights Reserved MadeInChina.com