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2-12 Inch Epitaxially Grown Sapphire Substrate Wafers

2025-04-09 4730

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Product Specifications

Model NO.:

2 InchSubstrate, 4 InchSubstrate, 6 Inch substrate

Application:

Detector, Diode, LCD Display Controller, Power Electronic Components, Television, Temperature Measurement, Single Crystal Substrate Material

Batch Number:

2024

Manufacturing Technology:

Optoelectronic Semiconductor

Material:

Sapphire

Model:

LED

Type:

Intrinsic Semiconductor

Polishing:

Single or Double Sided

Moh'S Hardness:

9

Growth Method:

Czochralski Method

Density:

3.98(g/cm3)

Trademark:

HC

Transport Package:

Class 100 Clean Bags, Class 1000 Clean Rooms

Specification:

4-12Inch

Origin:

China

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