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To247-4L Ost50n65h4ewf Vces-650V Maximum Junction Temperature175 Pulse-200A Vce (sat) -1.4V Qg-104nc IGBT Video, Demo, How It Works & Features

Published: 2025-04-09 Published by: Shanghai Winture Electric Co., Ltd. 472 views 0 comments

Product Specifications

Model NO.:
cIGBT-Sic Diode TO247-4L OST50N65H4EWF
Certification:
RoHS, ISO
Shape:
GT
Shielding Type:
Remote Cut-Off Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Origin:
China
HS Code:
8541290000
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