180A 60V N-Channel Enhancement Mode Power Mosfet 180n06 to-247

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Jiangsu Donghai Semiconductor Co.,Ltd

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Profile Certified by SGS/BV
  • Jiangsu, China
  • Winnie Gao (Ms.)  
    Saleman
180N06
60V
180A
Discrete Device
N-type Semiconductor
Metal-Oxide Semiconductor
to-247
Power Switching, Converters, Full Bridge Control
180n06
2021
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description

 
PARAMETERSYMBOLVALUEUNIT
 
Drian-to-Source VoltageVDSS60V
Gate-to-Source VoltageVGSS±25V
Drain Current(continuous)ID(T=25ºC)180A
(T=100ºC)130A
Drain Current(Pulsed)IDM720A
Single Pulse Avalanche EnergyEAS800mJ
Total DissipationTa=25ºCPtot3W
TC=25ºCPtot220W
Junction TemperatureTj-55~175ºC
storage TemperatureTstg-55~175ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
Inverter power management system
Power tool control
Automotive electronics applications
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
180N06DTO-3P180N06DPb-freeTube600/box
180N06BTO-247180N06BPb-freeTube600/box
 
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