88A 60V N-Channel Enhancement Mode Power Mosfet DHD070n06 to-252

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Min Order 5000 Pieces
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Shipping From Jiangsu, China
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Jiangsu Donghai Semiconductor Co.,Ltd

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Profile Certified by SGS/BV
  • Jiangsu, China
  • Winnie Gao (Ms.)  
    Saleman
DHD070N06
60V
88A
Discrete Device
N-type Semiconductor
Metal-Oxide Semiconductor
to-252
Power Supply
DHD070n06
2021
Wxdh
WXDH
Tape & Reel
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLVALUEUNIT
DH070N06DHI070N06/DHE070N06/DHB070N06/DHD070N06DHF070N06
Drian-to-Source VoltageVDSS68V
Gate-to-Source VoltageVGSS±20V
Drain Current(continuous)ID(T=25ºC)88A
(T=100ºC)61A
Drain Current(Pulsed)IDM292A
Single Pulse Avalanche EnergyEAS550mJ
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot16750W
Junction TemperatureTj-55~175ºC
storage TemperatureTstg-55~175ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
DC-DC converters
Full bridge control
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DH070N06TO-220DH070N06Pb-freeTube1000/box
DHF070N06TO-220FDHF070N06Pb-freeTube1000/box
DHB070N06TO-251DHB070N06Pb-freeTube3000/box
DHD070N06TO-252DHD070N06Pb-freeTape & Reel2500/box
DHI070N06TO-262DHI070N06Pb-freeTube1000/box
DHE070N06TO-263DHE070N06Pb-freeTape & Reel800/box
 
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