Audited Supplier
OSG65R038HZF TO247
Extremely Low Switching Loss
Excellent Stability and Uniformity
PC Power
LED Lighting
Fast EV Charging Station
ISO, TUV, RoHS
24 Months
Orientalsemiconductor
Carton
35x30x37cm
China
854129000
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features
Applications
Key Performance Parameters
Marking Information
Dynamic Characteristics
Gate Charge Characteristics
Body Diode Characteristics
Note
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features
- Low RDS(ON) & FOM
- Extremely low switching loss
- Excellent stability and uniformity
- Ultra-fast and robust body diode
Applications
- PC power
- Telecom power
- Server power
- EV Charger
- Motor driver
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 700 | V |
| ID, pulse | 240 | A |
| RDS(ON), max @ VGS=10V | 38 | mΩ |
| Qg | 175 | nC |
Marking Information
| Product Name | Package | Marking |
| OSG65R038HZF | TO247 | OSG65R038HZ |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 650 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1), TC=25 °C | ID | 80 | A |
| Continuous drain current1), TC=100 °C | 50 | ||
| Pulsed drain current2), TC=25 °C | ID, pulse | 240 | A |
| Continuous diode forward current1), TC=25 °C | IS | 80 | A |
| Diode pulsed current2), TC=25 °C | IS, pulse | 240 | A |
| Power dissipation3) ,TC=25 °C | PD | 500 | W |
| Single pulsed avalanche energy5) | EAS | 2900 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 100 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 50 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.25 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=2 mA | ||
| 700 | 770 | VGS=0 V, ID=2 mA, Tj=150 °C | ||||
| Gate threshold voltage | VGS(th) | 3.0 | 4.5 | V | VDS=VGS, ID=2 mA | |
Drain-source on-state resistance | RDS(ON) | 0.032 | 0.038 | Ω | VGS=10 V, ID=40 A | |
| 0.083 | VGS=10 V, ID=40 A, Tj=150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | ||
| -100 | VGS=-30 V | |||||
| Drain-source leakage current | IDSS | 10 | μA | VDS=650 V, VGS=0 V | ||
| Gate resistance | RG | 2.1 | Ω | ƒ=1 MHz, Open drain |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 9276 | pF | VGS=0 V, VDS=50 V, ƒ=100 kHz | ||
| Output capacitance | Coss | 486 | pF | |||
| Reverse transfer capacitance | Crss | 12.8 | pF | |||
| Effective output capacitance, energy related | Co(er) | 278 | pF | VGS=0 V, VDS=0 V-400 V | ||
| Effective output capacitance, time related | Co(tr) | 1477 | pF | |||
| Turn-on delay time | td(on) | 55.9 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A | ||
| Rise time | tr | 121.2 | ns | |||
| Turn-off delay time | td(off) | 114.2 | ns | |||
| Fall time | tf | 8.75 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 175.0 | nC | VGS=10 V, VDS=400 V, ID=40 A | ||
| Gate-source charge | Qgs | 40.1 | nC | |||
| Gate-drain charge | Qgd | 76.1 | nC | |||
| Gate plateau voltage | Vplateau | 6.4 | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=80 A, VGS=0 V | ||
| Reverse recovery time | trr | 180 | ns | IS=30 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 1.5 | uC | |||
| Peak reverse recovery current | Irrm | 15.2 | A |
Note
- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
- VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25 °C.
