Audited Supplier
TO247 OST90N60HCZF
RoHS, ISO
Orientalsemi
China
8541290000
Product Description
General Description
OST75N65HSXF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Features
Advanced TGBTTM technology
Excellent conduction and switching loss
Excellent stability and uniformity
Fast and soft antiparallel diode
Applications
Induction converters
Uninterruptible power supplies
Key Performance Parameters
| Parameter | Value | Unit |
| VCES, min @ 25°C | 650 | V |
| Maximum junction temperature | 175 | °C |
| IC, pulse | 300 | A |
| VCE(sat), typ @ VGE=15V | 1.45 | V |
| Qg | 206 | nC |
Absolute Maximum Ratings at Tvj=25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Collector emitter voltage | VCES | 650 | V |
| Gate emitter voltage | VGES | ±20 | V |
| Transient gate emitter voltage, TP≤10µs, D<0.01 | ±30 | V | |
| Continuous collector current1) , TC=25ºC | IC | 90 | A |
| Continuous collector current1) , TC=100ºC | 75 | A | |
| Pulsed collector current2) , TC=25ºC | IC, pulse | 300 | A |
| Diode forward current1) , TC=25ºC | IF | 90 | A |
| Diode forward current1) , TC=100ºC | 75 | A | |
| Diode pulsed current2) , TC=25ºC | IF, pulse | 300 | A |
| Power dissipation3) , TC=25ºC | PD | 395 | W |
| Power dissipation3) , TC=100ºC | 198 | W | |
| Operation and storage temperature | Tstg, Tvj | -55 to 175 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| IGBT thermal resistance, junction-case | RθJC | 0.38 | °C/W |
| Diode thermal resistance, junction-case | RθJC | 0.75 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 40 | °C/W |
Electrical Characteristics at Tvj =25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE =0 V, IC =0.5 mA | ||
Collector-emitter saturation voltage | VCE(sat) | 1.45 | 1.75 | V | VGE =15 V, IC=75 A Tvj=25°C | |
| 1.65 | V | VGE =15 V, IC=75 A, Tvj =125°C | ||||
| 1.75 | VGE =15 V, IC=75 A, Tvj =175°C | |||||
| Gate-emitter threshold voltage | VGE(th) | 3.0 | 4.0 | 5.0 | V | VCE =VGE , ID =0.5 mA |
Diode forward voltage | VF | 1.9 | 2.1 | V | VGE =0 V, IF =75 A Tvj =25°C | |
| 1.8 | VGE =0 V, IF =75 A, Tvj =125°C | |||||
| 1.7 | VGE =0 V, IF =75 A, Tvj =175°C | |||||
| Gate-emitter leakage current | IGES | 100 | nA | VCE =0 V, VGE=20 V | ||
| Zero gate voltage collector current | ICES | 10 | μA | VCE =650 V, VGE =0 V |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Cies | 8182 | pF | VGE=0 V, VCE =25 V, ƒ=100 kHz | ||
| Output capacitance | Coes | 178 | pF | |||
| Reverse transfer capacitance | Cres | 62 | pF | |||
| Turn-on delay time | td(on) | 56 | ns | VGE=15 V, VCC=400 V, RG=10 Ω, IC=75 A | ||
| Rise time | tr | 94 | ns | |||
| Turn-off delay time | td(off) | 288 | ns | |||
| Fall time | tf | 96 | ns | |||
| Turn-on energy | Eon | 2.54 | mJ | |||
| Turn-off energy | Eoff | 1.15 | mJ | |||
| Turn-on delay time | td(on) | 54 | ns | VGE=15 V, VCC=400 V, RG=10 Ω, IC=30 A | ||
| Rise time | tr | 48 | ns | |||
| Turn-off delay time | td(off) | 322 | ns | |||
| Fall time | tf | 71 | ns | |||
| Turn-on energy | Eon | 0.79 | mJ | |||
| Turn-off energy | Eoff | 0.35 | mJ |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 206 | nC | VGE =15 V, VCC=520 V, IC=75 A | ||
| Gate-emitter charge | Qge | 56 | nC | |||
| Gate-collector charge | Qgc | 66 | nC |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
Ordering Information
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO247-P | 30 | 11 | 330 | 6 | 1980 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OST75N65HSXF | TO247 | yes | yes | yes |
Supply Chian
Green Product Declaration
