Audited Supplier
TO252 SFG10R20DF
RoHS, ISO
Metal Porcelain Tube
Sharp Cutoff Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Planar
Chip Transistor
High Power
Silicon
Pd Charge
Motor Driver
DC-DC Convertor
Switched Mode Powder Supply
Orientalsemi
Carton
35x30x37cm
China
8541290000
Product Description
General Description
SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially designed to use in synchronous rectification power systems with low driving voltage.
Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent reliability and uniformity
. Fast switching and soft recovery
Applications
. PD charger
. Motor driver
. Switching voltage regulator
. DC-DC convertor
. Switched mode power supply
Key Performance Parameters
Marking Information
Package & Pin information
Oriental Semiconductor © Copyright Reserved V2.0
SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially designed to use in synchronous rectification power systems with low driving voltage.
Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent reliability and uniformity
. Fast switching and soft recovery
Applications
. PD charger
. Motor driver
. Switching voltage regulator
. DC-DC convertor
. Switched mode power supply
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 100 | V |
| ID, pulse | 120 | A |
| RDS(ON) max @ VGS=10V | 20 | mΩ |
| Qg | 19.8 | nC |
Marking Information
| Product Name | Package | Marking |
| SFG10R20DF | TO252 | SFG10R20D |
Package & Pin information
Oriental Semiconductor © Copyright Reserved V2.0
Page.1
SFG10R20DF
Enhancement Mode N-Channel Power MOSFET
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics at Tj=25°C unless otherwise specified
Enhancement Mode N-Channel Power MOSFET
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDS | 100 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current1) , TC=25 °C | ID | 40 | A |
| Pulsed drain current2) , TC=25 °C | ID, pulse | 120 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 40 | A |
| Diode pulsed current2) , TC=25 °C | IS, Pulse | 120 | A |
| Power dissipation3) , TC=25 °C | PD | 72 | W |
| Single pulsed avalanche energy5) | EAS | 30 | mJ |
| Operation and storage temperature | Tstg ,Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 1.74 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0 V, ID=250 μA | ||
| Gate threshold voltage | VGS(th) | 1.0 | 2.5 | V | VDS=VGS , ID=250 μA | |
| Drain-source on-state resistance | RDS(ON) | 17 | 20 | mΩ | VGS=10 V, ID=8 A | |
| Drain-source on-state resistance | RDS(ON) | 26 | mΩ | VGS=4.5 V, ID=6 A | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V | ||
| - 100 | VGS=-20 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS=100 V, VGS=0 V |
Oriental Semiconductor © Copyright Reserved V2.0
Page.2
Page.2
Dynamic Characteristics
SFG10R20DF
Enhancement Mode N-Channel Power MOSFET
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 1191 | pF | VGS=0 V, VDS=50 V, ƒ=1 MHz | ||
| Output capacitance | Coss | 195 | pF | |||
| Reverse transfer capacitance | Crss | 4.1 | pF | |||
| Turn-on delay time | td(on) | 17.8 | ns | VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=10 A | ||
| Rise time | tr | 3.9 | ns | |||
| Turn-off delay time | td(off) | 33.5 | ns | |||
| Fall time | tf | 3.2 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 19.8 | nC | VGS=10 V, VDS=50 V, ID=8 A | ||
| Gate-source charge | Qgs | 2.4 | nC | |||
| Gate-drain charge | Qgd | 5.3 | nC | |||
| Gate plateau voltage | Vplateau | 3.2 | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=8 A, VGS=0 V | ||
| Reverse recovery time | trr | 50.2 | ns | VR=50 V, IS=8 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 95.1 | nC | |||
| Peak reverse recovery current | Irrm | 2.5 | A |
Note
1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.
