6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd Video - MadeInChina.com

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6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd 2025-04-09 2080IP Unknown
	Sapphire Crystal Ingot Semiconductor Material 444 views 6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer 253 views 6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd 208 views Premium 2-6 Inch Undoped GaN Wafer for Power Devices 396 views Sapphire Semiconductor Crystal Substrate Material Sapphire Wafer 484 views

Product Specifications

Model NO.:

6Inch N type P Grade

Application:

Diode, Power Electronic Components

Certification:

RoHS

Manufacturing Technology:

Pvt

Material:

6n Sic Powder

Model:

4h

Package:

Epi-Ready with Vacuum Packaging

Type:

N-Type Semiconductor

Diameter:

6 Inch

Thickness:

350±25μm

Poly Type:

4h

(Afm)Front(Si-Face)Roughness:

Ra≤0.2nm

Resistivity:

0.016~0.025ohm ·cm

Ltv:

≤5μm(10mm*10mm)

Warp:

≤35μm

Trademark:

HC

Transport Package:

Multi-Waferorsingle Wafer Cassette Packaging

Specification:

6Inch

Origin:

China

HS Code:

2804611900

You May Like: Silicon Carbide Wafer, Sic Wafer, Sic Substrate, Sic Crystal

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