6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer Video - MadeInChina.com

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6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer 2025-04-09 2530IP Unknown
	Research Grade 6inch N Type Silicon Carbide Wafer Sic Wafer China 356 views Sapphire Crystal Ingot Semiconductor Material 444 views 6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer 253 views 6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd 208 views Premium 2-6 Inch Undoped GaN Wafer for Power Devices 396 views

Product Specifications

Model NO.:

6Inch Ultra-P Grade

Certification:

CCC, CE, RoHS

Diameter:

150 ±0.25 mm

Resistivity:

0.016~0.024ohm ·cm

Dopant:

N-Type Nitrogen

Ttv:

≤5μm

Warp:

≤20μm

(Afm)Front(Si-Face)Roughness:

Ra≤0.2nm

Trademark:

HC

Specification:

6Inch

Origin:

China

HS Code:

2804611900

You May Like: Silicon Carbide Wafer, Sic Wafer, Sic Substrate, Sic Crystal

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