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100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252

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Min Order 5000 Pieces
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Shipping From Jiangsu, China
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Model NO.:
DH060N07D
Manufacturing Technology:
Discrete Device
Type:
N-type Semiconductor
Material:
Metal-Oxide Semiconductor
Package:
to-252b
Application:
Power Switching, Converters, Full Bridge Control
Model:
Dh060n07D
Batch Number:
2021
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
by Sea, Packing
Origin:
Wuxi, China
HS Code:
8541290000
Product Description

 
Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
 
Applications
Power switching applications
DC-DC converters
Full bridge control
 
PARAMETERSYMBOLRATINGUNIT
 
Drian-to-Source VoltageVDSS68V
Gate-to-Source VoltageVGSS±20V
Continuous Drain CurrentID TC=25ºC100A
TC=100ºC70A
Pulsed Drain CurrentIDM400A
Single Pulse Avalanche EnergyEAS600V
Power DissipationTa=25ºCPtot2W
TC=25ºCPtot145W
Junction Temperature RangeTj-55~175ºC
Storage Temperature RangeTstg-55~175ºC
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DH060N07BTO-251DH060N07BPb-freeTube3000/box
DH060N07DTO-252DH060N07DPb-freeTape & Reel2500/box

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