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150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15
| Price | $1.50 |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Jiangsu, China |
| Popularity | 352 people viewed |
Model NO.:
DHS042N15
Application:
Switching Mode Power Supplies
Batch Number:
2023
Manufacturing Technology:
Discrete Device
Material:
Silicon
Model:
Dhs042n15
Package:
to-220
Type:
N-Type Semiconductor
Voltage:
150V
Current:
150A
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Reel
Origin:
Wuxi, China
HS Code:
8541100000
Product Description
8A 650V SIC SchottkyBarrierDiode
1 Description
SIC Series products family offers state of the art performance. It is designed for high
frequency applications where high efficiency and high reliability are required.
| Features |
Low on resistance |
Low gate charge |
Fast switching |
Low reverse transfer capacitances |
100% single pulse avalanche energy test |
100% ΔVDS test |
| Applications |
Motor Control and Drive |
Battery management |
UPS (Uninterrupible Power Supplies) |
Marking &packing information
Part # | Package | Marking | Tube/Reel | Qty(pcs) |
DHS042N15 | TO-220 | DHS042N15 | Tube | 1000/box |
| PARAMETER | SYMBOL | VALUE | UNIT | ||
Drain-source voltage | VDS | 150 | V | ||
Gate-Source voltage | VGS | ±20 | V | ||
Continuous drain current | TC = 25°C | ID | 150 | A | |
TC = 100°C | 106 | A | |||
Pulsed drain current (TC = 25°C, tp limited by Tjmax) | IDM | 600 | A | ||
Avalanche energy, single pulse (L=0.5mH, Rg=25) | EAS | 1406 | MJ | ||
Power dissipation (TC = 25°C) | Ptot | 3 | W | ||
Operating junction and storage temperature | Tj , T stg | -55~175 | ºC | ||
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