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2-12 Inch Epitaxially Grown Sapphire Substrate Wafers Video, Demo, How It Works & Features

Published: 2025-04-09 Published by: Hangzhou HCJingRui Technology Co., Ltd. 495 views 0 comments

Product Specifications

Model NO.:
2 InchSubstrate, 4 InchSubstrate, 6 Inch substrate
Application:
Detector, Diode, LCD Display Controller, Power Electronic Components, Television, Temperature Measurement, Single Crystal Substrate Material
Batch Number:
2024
Manufacturing Technology:
Optoelectronic Semiconductor
Material:
Sapphire
Model:
LED
Type:
Intrinsic Semiconductor
Polishing:
Single or Double Sided
Moh'S Hardness:
9
Growth Method:
Czochralski Method
Density:
3.98(g/cm3)
Trademark:
HC
Transport Package:
Class 100 Clean Bags, Class 1000 Clean Rooms
Specification:
4-12Inch
Origin:
China
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