8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate Video, Demo, How It Works & Features
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Product Specifications
Model NO.:
4H N-type Ultra-P Grade
Application:
Diode, Power Electronic Components
Certification:
RoHS
Manufacturing Technology:
Pvt
Material:
6n Sic Powder
Model:
4h N-Type
Package:
Epi-Ready with Vacuum Packaging
Type:
N-Type Semiconductor
Diameter:
8 Inch
Thickness:
500±25μm
Poly Type:
4h
Resistivity:
0.015~0.025ohm·cm
Ttv:
≤7μm
Warp:
≤30μm
(Afm) Front (Si-Face) Roughness:
Ra≤0.2nm
Trademark:
HC
Transport Package:
Multi-Waferorsingle Wafer Cassette Packaging
Specification:
8Inch 4H N-type
Origin:
China
HS Code:
2804611900