Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors Video, Demo, How It Works & Features
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Product Specifications
Model NO.:
INC-DBC20310
Application:
Semiconductors, Aerospace, Electronics, Medical, Vacuum Brazing
Compressive Strength:
2300MPa
Coating Thickness:
8-30μm
Coating Layer:
Mo/Mn
Plated Layer:
Nickel/Copper/Gold etc.
Thermal Conductivity:
25W/(M.K)
Plating Thickness:
2-9μm
Max. Use Temperature:
1600ºC
Density:
3.7g/cm3
Material Composition:
Alumina, Al2O3
Speciality:
High Insulation
Type:
Insulating Ceramics
Trademark:
INNOVACERA
Specification:
Customized
Origin:
Fujian, China