5A 200V N-Channel Enhancement Mode Power Mosfet B5n20 to-251

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Min Order 5000 Pieces
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Jiangsu Donghai Semiconductor Co.,Ltd

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Profile Certified by SGS/BV
  • Jiangsu, China
  • Winnie Gao (Ms.)  
    Saleman
B5N20
Discrete Device
N-type Semiconductor
Metal-Oxide Semiconductor
to-251b
Power Switching Circuit
2022
Wxdh
B5n20
WXDH
Tube
Wuxi, China
8541290000
Product Description

 
PARAMETERSYMBOLVALUEUNIT
5N20/I5N20/E5N20/B5N20/D5N20F5N20 
Drian-Source VoltageVDS200V
Gate-Drain VoltageVGS±30V
Drain Current(continuous)ID(T=25ºC)5A
(T=100ºC)3.4A
Drain Current(Pulsed)IDM20A
Single Pulse Avalanche EnergyEAS125mJ
Peak Diode Recovery dv/dtdv/dt5V/ns
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot4020W
Junction TemperatureTj-55~150ºC
storage TemperatureTstg-55~150ºC
 
Features
Fast Switching
Low ON Resistance(Rdson≤0.65Ω)
Low Gate Charge(Typ: 7nC)
Low Reverse Transfer Capacitances(Typ: 8pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of adaptor and charger.
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
5N20TO-220C5N20Pb-freeTube1000/box
F5N20TO-220FF5N20Pb-freeTube1000/box
B5N20TO-251B5N20Pb-freeTube3000/box
D5N20TO-252D5N20Pb-freeTape & Reel2500/box
I5N20TO-262I5N20Pb-freeTube1000/box
E5N20TO-263E5N20Pb-freeTape & Reel800/box
 
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