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21A 650V N-Channel Super Junction Power Mosfet Dhsj21n65W to-247
| Price | $0.20 |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Jiangsu, China |
| Popularity | 313 people viewed |
Model NO.:
DHSJ21N65W
Application:
UPS, Pfc, SMPS
Batch Number:
2023
Manufacturing Technology:
Discrete Device
Material:
Metal-Oxide Semiconductor
Model:
Dhsj21n65W
Package:
to-247
Type:
N-Type Semiconductor
Voltage:
650V
Currency:
21A
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Carton
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
| Features |
| Fast switching |
| Low on resistance(Rdson≤0.165Ω) |
| Low gate charge(Typ: 50nC) |
| Low reverse transfer capacitances(Typ: 3.5pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Power factor correction(PFC). |
| Switched mode power supplies(SMPS). |
| Uninterruptible power supply(UPS). |
| AC to DC Converters |
| Telecom, SOLAR |
| PARAMETER | SYMBOL | RATING | UNIT | |||
| Drian-to-Source Voltage | VDSS | 650 | V | |||
| Gate-to-Source Voltage | VGSS | ±30 | V | |||
| Continuous Drain Current | ID TC=25ºC | 21 | A | |||
| TC=100ºC | 13.2 | A | ||||
| Pulsed Drain Current | IDM | 63 | A | |||
| Single Pulse Avalanche Energy | EAS | 484 | mJ | |||
| Power Dissipation | Ta=25ºC | Ptot | 3 | W | ||
| TC=25ºC | Ptot | 151 | W | |||
| Junction Temperature Range | Tj | -55~150 | ºC | |||
| Storage Temperature Range | Tstg | -55~150 | ºC | |||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHSJ21N65W | TO-220C | DHSJ21N65W | Pb-free | Tube | 300/box |
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