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5A 200V N-Channel Enhancement Mode Power Mosfet B5n20 to-251
| Price | Negotiable |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Jiangsu, China |
| Popularity | 296 people viewed |
Model NO.:
B5N20
Manufacturing Technology:
Discrete Device
Type:
N-type Semiconductor
Material:
Metal-Oxide Semiconductor
Package:
to-251b
Application:
Power Switching Circuit
Batch Number:
2022
Brand:
Wxdh
Model:
B5n20
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| 5N20/I5N20/E5N20/B5N20/D5N20 | F5N20 | ||||
| Drian-Source Voltage | VDS | 200 | V | ||
| Gate-Drain Voltage | VGS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 5 | A | ||
| (T=100ºC) | 3.4 | A | |||
| Drain Current(Pulsed) | IDM | 20 | A | ||
| Single Pulse Avalanche Energy | EAS | 125 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 40 | 20 | W | |
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
| Low ON Resistance(Rdson≤0.65Ω) |
| Low Gate Charge(Typ: 7nC) |
| Low Reverse Transfer Capacitances(Typ: 8pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of adaptor and charger. |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| 5N20 | TO-220C | 5N20 | Pb-free | Tube | 1000/box |
| F5N20 | TO-220F | F5N20 | Pb-free | Tube | 1000/box |
| B5N20 | TO-251 | B5N20 | Pb-free | Tube | 3000/box |
| D5N20 | TO-252 | D5N20 | Pb-free | Tape & Reel | 2500/box |
| I5N20 | TO-262 | I5N20 | Pb-free | Tube | 1000/box |
| E5N20 | TO-263 | E5N20 | Pb-free | Tape & Reel | 800/box |
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