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Pdfn5*6 Sfs06r011ugf Vds-60 ID-8 00A RDS (ON) -1.5milliohm Qg-98.3nc N-Channel Power Mosfet
| Price | $0.60 |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Shanghai, China |
| Popularity | 497 people viewed |
Model NO.:
Pdfn5*6 SFS06R011UGF
Certification:
RoHS, ISO
Shape:
Subminiature
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
35x30x37cm
Origin:
China
HS Code:
8541290000
Product Description
General Description
FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent reliability and uniformity
Fast switching and soft recovery
Applications
PD charger
Motor driver
Switching voltage regulator
DC-DC convertor
Switching mode power supply
Key Performance Parameters
| Parameter | Value | Unit |
| VDS | 60 | V |
| ID, pulse | 800 | A |
| RDS(ON), max @ VGS =10V | 1.5 | mΩ |
| Qg | 98.3 | nC |
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 60 | V |
| Gate-source voltage | VGS | ±20 | V |
| Continuous drain current1) , TC=25 °C | ID | 200 | A |
| Pulsed drain current2) , TC=25 °C | ID, pulse | 800 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 200 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 800 | A |
| Power dissipation3), TC=25 °C | PD | 170 | W |
| Single pulsed avalanche energy5) | EAS | 208 | mJ |
| Operation and storage temperature | Tstg , Tj | -55 to 150 | °C |
Electrical Characteristics at Tj =25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS =0 V, ID =250 μA | ||
| Gate threshold voltage | VGS(th) | 1.3 | 2.3 | V | VDS =VGS , ID =250 μA | |
| Drain-source on-state resistance | RDS(ON) | 1.3 | 1.5 | mΩ | VGS =10 V, ID=30 A | |
| Drain-source on-state resistance | RDS(ON) | 1.8 | 2.1 | mΩ | VGS =4.5 V, ID=30 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS =20 V | ||
| - 100 | VGS =-20 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS =60 V, VGS =0 V | ||
| Gate resistance | RG | 2.3 | Ω | ƒ=1 MHz, Open drain |
Ordering Information
| Package Type | Units/ Reel | Reels/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| PDFN5×6-S | 5000 | 1 | 5000 | 10 | 50000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| SFS06R011UGF | PDFN5×6 | yes | yes | yes |
Supply Chain
Green Product Declaration
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